UPA2732UT1A-E1-AY
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Renesas Electronics America Inc UPA2732UT1A-E1-AY

Manufacturer No:
UPA2732UT1A-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2732UT1A-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 40A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3280 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN3333 (3.3x3.3)
Package / Case:8-VDFN Exposed Pad
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Similar Products

Part Number UPA2732UT1A-E1-AY UPA2732T1A-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package 8-DFN3333 (3.3x3.3) -
Package / Case 8-VDFN Exposed Pad -

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