UPA2723UT1A-E1-AY
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Renesas Electronics America Inc UPA2723UT1A-E1-AY

Manufacturer No:
UPA2723UT1A-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2723UT1A-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 33A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:33A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:2.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:8100 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-DFN3333 (3.3x3.3)
Package / Case:8-VDFN Exposed Pad
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In Stock

$1.92
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Similar Products

Part Number UPA2723UT1A-E1-AY UPA2726UT1A-E1-AY   UPA2727UT1A-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta) 20A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 2.5mOhm @ 17A, 10V 7mOhm @ 10A, 10V 9.6mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 5 V 15 nC @ 5 V 11 nC @ 5 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 10 V 1720 pF @ 15 V 1170 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) - - -
Operating Temperature - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3) 8-DFN3333 (3.3x3.3) 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad 8-VDFN Exposed Pad 8-VDFN Exposed Pad

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