UPA2718AGR-E2-AT
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Renesas Electronics America Inc UPA2718AGR-E2-AT

Manufacturer No:
UPA2718AGR-E2-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2718AGR-E2-AT Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 13A 8PSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:9mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2810 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-PSOP
Package / Case:8-SOIC (0.173", 4.40mm Width)
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Similar Products

Part Number UPA2718AGR-E2-AT UPA2718GR-E2-AT   UPA2718AGR-E1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active Obsolete
FET Type P-Channel - P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta) - 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 9mOhm @ 6.5A, 10V - 9mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V - 67 nC @ 10 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 2810 pF @ 10 V - 2810 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - - -
Operating Temperature - - -
Mounting Type Surface Mount - Surface Mount
Supplier Device Package 8-PSOP - 8-PSOP
Package / Case 8-SOIC (0.173", 4.40mm Width) - 8-SOIC (0.173", 4.40mm Width)

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