UPA2717GR-E1-AT
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Renesas Electronics America Inc UPA2717GR-E1-AT

Manufacturer No:
UPA2717GR-E1-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2717GR-E1-AT Datasheet
ECAD Model:
-
Description:
P-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$1.51
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Similar Products

Part Number UPA2717GR-E1-AT UPA2719GR-E1-AT   UPA2718GR-E1-AT   UPA2737GR-E1-AT   UPA2715GR-E1-AT   UPA2717AGR-E1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Obsolete Active Obsolete
FET Type - - - P-Channel - P-Channel
Technology - - - MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - - 30 V - 30 V
Current - Continuous Drain (Id) @ 25°C - - - 11A (Ta) - 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - - 4.5V, 10V - -
Rds On (Max) @ Id, Vgs - - - 13mOhm @ 11A, 10V - 5.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id - - - - - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - 45 nC @ 10 V - 130 nC @ 10 V
Vgs (Max) - - - ±20V - -
Input Capacitance (Ciss) (Max) @ Vds - - - 1750 pF @ 10 V - 3550 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) - - - 1.1W (Ta) - -
Operating Temperature - - - 150°C (TJ) - -
Mounting Type - - - Surface Mount - Surface Mount
Supplier Device Package - - - 8-SOP - 8-PSOP
Package / Case - - - 8-SOIC (0.173", 4.40mm Width) - 8-SOIC (0.173", 4.40mm Width)

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