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UPA2650T1E-E2-AT
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Renesas Electronics America Inc UPA2650T1E-E2-AT

Manufacturer No:
UPA2650T1E-E2-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2650T1E-E2-AT Datasheet
ECAD Model:
-
Description:
POWER, N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.8A
Rds On (Max) @ Id, Vgs:65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:220pF @ 10V
Power - Max:1.1W
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:6-VDFN Exposed Pad
Supplier Device Package:6-MLP (3x3)
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$0.48
1,865

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