UPA2520T1H-T2-AT
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Renesas Electronics America Inc UPA2520T1H-T2-AT

Manufacturer No:
UPA2520T1H-T2-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA2520T1H-T2-AT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 10A 8VSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:13.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSOF
Package / Case:8-SMD, Flat Lead
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$0.71
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Similar Products

Part Number UPA2520T1H-T2-AT UPA2521T1H-T2-AT   UPA2520T1H-T1-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 8A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 13.2mOhm @ 10A, 10V 16.5mOhm @ 8A, 10V 13.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 5 V 7.6 nC @ 5 V 10.8 nC @ 5 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V 780 pF @ 15 V 1100 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSOF 8-VSOF 8-VSOF
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead

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