Renesas Electronics America Inc-UPA2350T1G-E4-A - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	6A
Rds On (Max) @ Id, Vgs:	35mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	8.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds:	542pF @ 10V
Power - Max:	1.3W
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	4-XBGA, 4-FCBGA
Supplier Device Package:	4-FlipChip

Renesas Electronics America Inc UPA2350T1G-E4-A