UPA1809GR-9JG-E2-A
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Renesas Electronics America Inc UPA1809GR-9JG-E2-A

Manufacturer No:
UPA1809GR-9JG-E2-A
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA1809GR-9JG-E2-A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:21mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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In Stock

$0.55
275

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Similar Products

Part Number UPA1809GR-9JG-E2-A UPA1809GR-9JG-E1-A  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 10V 21mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 10 V 520 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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