Renesas Electronics America Inc-UPA1759G-E1-AT - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	5A
Rds On (Max) @ Id, Vgs:	150mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	190pF @ 10V
Power - Max:	2W
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:	8-PSOP

Renesas Electronics America Inc UPA1759G-E1-AT