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UPA1759G-E1-AT
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Renesas Electronics America Inc UPA1759G-E1-AT

Manufacturer No:
UPA1759G-E1-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
UPA1759G-E1-AT Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:5A
Rds On (Max) @ Id, Vgs:150mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:190pF @ 10V
Power - Max:2W
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:8-PSOP
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In Stock

$0.52
806

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