Renesas Electronics America Inc-UPA1728G-E1-AT - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	26mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	31 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	1700 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	8-PSOP
Package / Case:	8-SOIC (0.173", 4.40mm Width)

Renesas Electronics America Inc UPA1728G-E1-AT