TBB1012MMTL-E
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Renesas Electronics America Inc TBB1012MMTL-E

Manufacturer No:
TBB1012MMTL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
TBB1012MMTL-E Datasheet
ECAD Model:
-
Description:
RF N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$0.28
2,461

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Similar Products

Part Number TBB1012MMTL-E TBB1012MMTL-H  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type - -
Technology - -
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C - -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type - -
Supplier Device Package - -
Package / Case - -

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