Renesas Electronics America Inc-RQJ0303PGDQA#H6 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	68mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 10 V
Vgs (Max):	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	625 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	800mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	3-MPAK
Package / Case:	TO-236-3, SC-59, SOT-23-3

Renesas Electronics America Inc RQJ0303PGDQA#H6