Renesas Electronics America Inc-RJP60F5DPK-01#T0 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	80 A
Current - Collector Pulsed (Icm):	160 A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 40A
Power - Max:	260.4 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	74 nC
Td (on/off) @ 25°C:	53ns/90ns
Test Condition:	400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-3P

Renesas Electronics America Inc RJP60F5DPK-01#T0