Renesas Electronics America Inc-RJP4301APP-M0#T2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	430 V
Current - Collector (Ic) (Max):	-
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	10V @ 26V, 200A
Power - Max:	30 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	50ns/100ns
Test Condition:	300V, 200A, 30Ohm, 26V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FL

Renesas Electronics America Inc RJP4301APP-M0#T2