RJL60S5DPP-E0#T2
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Renesas Electronics America Inc RJL60S5DPP-E0#T2

Manufacturer No:
RJL60S5DPP-E0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJL60S5DPP-E0#T2 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$6.64
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Similar Products

Part Number RJL60S5DPP-E0#T2 RJK60S5DPP-E0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V
Current - Continuous Drain (Id) @ 25°C - 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - 178mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - 27 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - 1600 pF @ 25 V
FET Feature - Super Junction
Power Dissipation (Max) - 33.7W (Tc)
Operating Temperature - 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - TO-220FP
Package / Case - TO-220-3 Full Pack

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