RJL6013DPE-WS#J3
  • Share:

Renesas Electronics America Inc RJL6013DPE-WS#J3

Manufacturer No:
RJL6013DPE-WS#J3
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJL6013DPE-WS#J3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 11A 4LDPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:810mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LDPAK
Package / Case:SC-83
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJL6013DPE-WS#J3 RJK6013DPE-WS#J3  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 810mOhm @ 5.5A, 10V 700mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 1450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 100W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LDPAK LDPAK
Package / Case SC-83 SC-83

Related Product By Categories

IRFP32N50KPBF
IRFP32N50KPBF
Vishay Siliconix
MOSFET N-CH 500V 32A TO247-3
MTD5N25E1
MTD5N25E1
onsemi
NFET DPAK 250V 1.0R
CSD18532Q5BT
CSD18532Q5BT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
SPA11N80C3XKSA1
SPA11N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 11A TO220-FP
PSMN028-100YS,115
PSMN028-100YS,115
Nexperia USA Inc.
MOSFET N-CH 100V 42A LFPAK56
IXFH14N60P
IXFH14N60P
IXYS
MOSFET N-CH 600V 14A TO247AD
PMN25ENEH
PMN25ENEH
Nexperia USA Inc.
MOSFET N-CH 30V 6.1A 6TSOP
PMV20XN,215
PMV20XN,215
NXP USA Inc.
MOSFET N-CH 30V 4.8A TO236AB
IRFI840GLC
IRFI840GLC
Vishay Siliconix
MOSFET N-CH 500V 4.5A TO220-3
STP8NK85Z
STP8NK85Z
STMicroelectronics
MOSFET N-CH 850V 6.7A TO220AB
IPB100N06S3-03
IPB100N06S3-03
Infineon Technologies
MOSFET N-CH 55V 100A TO263-3
IPB12CN10N G
IPB12CN10N G
Infineon Technologies
MOSFET N-CH 100V 67A D2PAK

Related Product By Brand

ISL28214MSOPEVAL2Z
ISL28214MSOPEVAL2Z
Renesas Electronics America Inc
EVALUATION BOARD FOR ISL28214
HZS12C1LTD-E
HZS12C1LTD-E
Renesas Electronics America Inc
DIODE ZENER
H7N0308CF-E
H7N0308CF-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
9FGV1005A202LTGI8
9FGV1005A202LTGI8
Renesas Electronics America Inc
IC CLOCK GENERATOR LGA
8N4SV75LC-0062CDI
8N4SV75LC-0062CDI
Renesas Electronics America Inc
IC OSC VCXO 150MHZ 6-CLCC
8N4SV76KC-0054CDI8
8N4SV76KC-0054CDI8
Renesas Electronics America Inc
IC OSC VCXO 25MHZ 6-CLCC
74HC241PV-E
74HC241PV-E
Renesas Electronics America Inc
IC BUFFER NON-INVERT 6V
72841L10TF8
72841L10TF8
Renesas Electronics America Inc
IC FIFO SYNC 4KX9 10NS 64QFP
74CBTLV16212PAG8
74CBTLV16212PAG8
Renesas Electronics America Inc
IC BUS FET EXC SW 12X2:2 56TSSOP
M5M5256DFP-70GI#BM
M5M5256DFP-70GI#BM
Renesas Electronics America Inc
IC SRAM 256KBIT PARALLEL 28SOP
R1LV0108ESA-7SR#B0
R1LV0108ESA-7SR#B0
Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 32STSOP
PS9309L2-E3-AX
PS9309L2-E3-AX
Renesas Electronics America Inc
HI-SPD OPTOCPLR 6PIN SDIP