RJL6013DPE-WS#J3
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Renesas Electronics America Inc RJL6013DPE-WS#J3

Manufacturer No:
RJL6013DPE-WS#J3
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJL6013DPE-WS#J3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 11A 4LDPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:810mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LDPAK
Package / Case:SC-83
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Similar Products

Part Number RJL6013DPE-WS#J3 RJK6013DPE-WS#J3  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 810mOhm @ 5.5A, 10V 700mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 1450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 100W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LDPAK LDPAK
Package / Case SC-83 SC-83

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