RJL6013DPE-WS#J3
  • Share:

Renesas Electronics America Inc RJL6013DPE-WS#J3

Manufacturer No:
RJL6013DPE-WS#J3
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJL6013DPE-WS#J3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 11A 4LDPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:810mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LDPAK
Package / Case:SC-83
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJL6013DPE-WS#J3 RJK6013DPE-WS#J3  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 810mOhm @ 5.5A, 10V 700mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 1450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 100W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LDPAK LDPAK
Package / Case SC-83 SC-83

Related Product By Categories

SSM3K35CTC,L3F
SSM3K35CTC,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 250MA CST3C
SIS412DN-T1-GE3
SIS412DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A PPAK1212-8
FDU044AN03L
FDU044AN03L
Fairchild Semiconductor
MOSFET N-CH 30V 21A/35A IPAK
SQJ454EP-T1_BE3
SQJ454EP-T1_BE3
Vishay Siliconix
N-CHANNEL 200-V (D-S) 175C MOSFE
SISS32ADN-T1-GE3
SISS32ADN-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 17.4A/63A PPAK
NVMFS6H836NWFT1G
NVMFS6H836NWFT1G
onsemi
MOSFET N-CH 80V 15A/74A 5DFN
IXFP30N60X
IXFP30N60X
IXYS
MOSFET N-CH 600V 30A TO220
IRFU9010
IRFU9010
Vishay Siliconix
MOSFET P-CH 50V 5.3A TO251AA
STD3NM50T4
STD3NM50T4
STMicroelectronics
MOSFET N-CH 550V 3A DPAK
IPB47N10SL26ATMA1
IPB47N10SL26ATMA1
Infineon Technologies
MOSFET N-CH 100V 47A TO263-3
ECH8601M-C-TL-HX
ECH8601M-C-TL-HX
onsemi
MOSFET N-CH 24V 8A ECH8
AUIRFSL4010-313TRL
AUIRFSL4010-313TRL
Infineon Technologies
MOSFET N-CH 100V 180A TO262

Related Product By Brand

XLH530016.000000X
XLH530016.000000X
Renesas Electronics America Inc
XTAL OSC XO 16.0000MHZ HCMOS SMD
HZS15-1LTA-E
HZS15-1LTA-E
Renesas Electronics America Inc
DIODE ZENER
9FGV1002CQ506LTGI
9FGV1002CQ506LTGI
Renesas Electronics America Inc
IC CLOCK GENERATOR LGA
MC88915TEI55
MC88915TEI55
Renesas Electronics America Inc
IC PLL CLOCK DRIVER 28-PLCC
8N3DV85BC-0106CDI
8N3DV85BC-0106CDI
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4SV76EC-0074CDI
8N4SV76EC-0074CDI
Renesas Electronics America Inc
IC OSC VCXO 100MHZ 6-CLCC
8N3QV01FG-1073CDI8
8N3QV01FG-1073CDI8
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
M30622SAFP#U5
M30622SAFP#U5
Renesas Electronics America Inc
IC MCU 16BIT ROMLESS 100QFP
72421L25PF
72421L25PF
Renesas Electronics America Inc
IC FIFO 64X9 SYNC 25NS 32-TQFP
ISL2111BR4Z
ISL2111BR4Z
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8DFN
X5083PIZ-2.7A
X5083PIZ-2.7A
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 8DIP
ISL6364ACRZ-T
ISL6364ACRZ-T
Renesas Electronics America Inc
IC REG IMVP-7 VR12 2OUT 48QFN