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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
RJL5014DPK-00#T0
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Renesas Electronics America Inc RJL5014DPK-00#T0
Manufacturer No:
RJL5014DPK-00#T0
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJL5014DPK-00#T0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 19A TO3P
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-3P
Package / Case:
TO-220-3 Full Pack
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UnitPrice:
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Quantity:
217
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