RJL5012DPP-00#T2
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Renesas Electronics America Inc RJL5012DPP-00#T2

Manufacturer No:
RJL5012DPP-00#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJL5012DPP-00#T2 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$3.61
224

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Similar Products

Part Number RJL5012DPP-00#T2 RJL5013DPP-00#T2   RJL5014DPP-00#T2   RJL5012DPP-M0#T2   RJK5012DPP-00#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active
FET Type - - - N-Channel -
Technology - - - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - - - 500 V -
Current - Continuous Drain (Id) @ 25°C - - - 12A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - - - 10V -
Rds On (Max) @ Id, Vgs - - - 700mOhm @ 6A, 10V -
Vgs(th) (Max) @ Id - - - - -
Gate Charge (Qg) (Max) @ Vgs - - - 27.8 nC @ 10 V -
Vgs (Max) - - - ±30V -
Input Capacitance (Ciss) (Max) @ Vds - - - 1050 pF @ 25 V -
FET Feature - - - - -
Power Dissipation (Max) - - - 30W (Tc) -
Operating Temperature - - - 150°C (TJ) -
Mounting Type - - - Through Hole -
Supplier Device Package - - - TO-220FL -
Package / Case - - - TO-220-3 Full Pack -

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