Renesas Electronics America Inc-RJK60S7DPK-M0#T0 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

Part Number	RJK60S7DPK-M0#T0	RJK60S5DPK-M0#T0
Manufacturer	Renesas Electronics America Inc	Renesas Electronics America Inc
Product Status	Obsolete	Obsolete
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	-
Rds On (Max) @ Id, Vgs	125mOhm @ 15A, 10V	178mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	-	-
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V	27 nC @ 10 V
Vgs (Max)	+30V, -20V	-
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 25 V	1600 pF @ 25 V
FET Feature	Super Junction	Super Junction
Power Dissipation (Max)	227.2W (Tc)	-
Operating Temperature	150°C (TJ)	-
Mounting Type	Through Hole	Through Hole
Supplier Device Package	TO-3PSG	TO-3PSG
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	39 nC @ 10 V
Vgs (Max):	+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	2300 pF @ 25 V
FET Feature:	Super Junction
Power Dissipation (Max):	227.2W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3PSG
Package / Case:	TO-3P-3, SC-65-3

Renesas Electronics America Inc RJK60S7DPK-M0#T0