RJK60S5DPK-M0#T0
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Renesas Electronics America Inc RJK60S5DPK-M0#T0

Manufacturer No:
RJK60S5DPK-M0#T0
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK60S5DPK-M0#T0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20A TO3PSG
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:178mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
FET Feature:Super Junction
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-3PSG
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number RJK60S5DPK-M0#T0 RJK60S7DPK-M0#T0  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 178mOhm @ 10A, 10V 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 39 nC @ 10 V
Vgs (Max) - +30V, -20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V 2300 pF @ 25 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) - 227.2W (Tc)
Operating Temperature - 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PSG TO-3PSG
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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