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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
RJK60S5DPE-00#J3
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Renesas Electronics America Inc RJK60S5DPE-00#J3
Manufacturer No:
RJK60S5DPE-00#J3
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK60S5DPE-00#J3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20A 4LDPAK
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
178mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
FET Feature:
Super Junction
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LDPAK
Package / Case:
SC-83
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UnitPrice:
$14.62
Quantity:
41
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