RJK6032DPD-00#J2
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Renesas Electronics America Inc RJK6032DPD-00#J2

Manufacturer No:
RJK6032DPD-00#J2
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK6032DPD-00#J2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 3A MP3A
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:285 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40.3W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MP-3A
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number RJK6032DPD-00#J2 RJK6002DPD-00#J2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1.5A, 10V 6.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 6.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 25 V 165 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40.3W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MP-3A MP-3A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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