RJK6018DPM-00#T1
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Renesas Electronics America Inc RJK6018DPM-00#T1

Manufacturer No:
RJK6018DPM-00#T1
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK6018DPM-00#T1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 30A TO3PFM
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:235mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PFM
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number RJK6018DPM-00#T1 RJK6015DPM-00#T1  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 235mOhm @ 15A, 10V 360mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 25 V 2600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PFM TO-3PFM
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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