RJK6015DPK-00#T0
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Renesas Electronics America Inc RJK6015DPK-00#T0

Manufacturer No:
RJK6015DPK-00#T0
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK6015DPK-00#T0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number RJK6015DPK-00#T0 RJK6018DPK-00#T0   RJK6014DPK-00#T0  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta) 30A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 10.5A, 10V 235mOhm @ 15A, 10V 575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 92 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V 4100 pF @ 25 V 1800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 200W (Tc) 150W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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