RJK6014DPP-E0#T2
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Renesas Electronics America Inc RJK6014DPP-E0#T2

Manufacturer No:
RJK6014DPP-E0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK6014DPP-E0#T2 Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number RJK6014DPP-E0#T2 RJK60S4DPP-E0#T2   RJK6014DPP-00#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete Active
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V 600 V -
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 16A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 575mOhm @ 8A, 10V 290mOhm @ 8A, 10V -
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 18 nC @ 10 V -
Vgs (Max) ±30V - -
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V 988 pF @ 25 V -
FET Feature - Super Junction -
Power Dissipation (Max) 35W (Tc) 29.9W (Tc) -
Operating Temperature 150°C (TJ) 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Supplier Device Package TO-220FP TO-220FP -
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack -

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