RJK5030DPP-M0#T2
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Renesas Electronics America Inc RJK5030DPP-M0#T2

Manufacturer No:
RJK5030DPP-M0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK5030DPP-M0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 5A TO220FL
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):28.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FL
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number RJK5030DPP-M0#T2 RJK5033DPP-M0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V 1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 28.5W (Tc) 27.4W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FL TO-220FL
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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