RJK5012DPP-E0#T2
  • Share:

Renesas Electronics America Inc RJK5012DPP-E0#T2

Manufacturer No:
RJK5012DPP-E0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK5012DPP-E0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 12A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

-
396

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJK5012DPP-E0#T2 RJK5012DPP-K0#T2   RJK5012DPP-00#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active Active
FET Type N-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 500 V - -
Current - Continuous Drain (Id) @ 25°C 12A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 620mOhm @ 6A, 10V - -
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V - -
Vgs (Max) ±30V - -
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 30W (Tc) - -
Operating Temperature 150°C (TJ) - -
Mounting Type Through Hole - -
Supplier Device Package TO-220FP - -
Package / Case TO-220-3 Full Pack - -

Related Product By Categories

G3R60MT07K
G3R60MT07K
GeneSiC Semiconductor
750V 60M TO-247-4 G3R SIC MOSFET
NDS7002A
NDS7002A
onsemi
MOSFET N-CH 60V 280MA SOT-23
SI4056DY-T1-GE3
SI4056DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 11.1A 8SO
SI7463ADP-T1-GE3
SI7463ADP-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 46A PPAK SO-8
BUK9Y6R5-40HX
BUK9Y6R5-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 70A LFPAK56
SQD10N30-330H_4GE3
SQD10N30-330H_4GE3
Vishay Siliconix
N-CHANNEL 300-V (D-S) 175C MOSFE
DMTH8028LPSWQ-13
DMTH8028LPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
AON6298
AON6298
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 14.5A/46A 8DFN
IRF7809ATR
IRF7809ATR
Infineon Technologies
MOSFET N-CH 30V 14.5A 8SO
TPC8109(TE12L)
TPC8109(TE12L)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 10A 8-SOP
NTD6416AN-1G
NTD6416AN-1G
onsemi
MOSFET N-CH 100V 17A IPAK
RZE002P02TL
RZE002P02TL
Rohm Semiconductor
MOSFET P-CH 20V 200MA EMT3

Related Product By Brand

BCR12FM-12LB#BB0
BCR12FM-12LB#BB0
Renesas Electronics America Inc
BCR12FM-12 - 12A, 600V TRIAC
9LRS4903BKLF
9LRS4903BKLF
Renesas Electronics America Inc
IC CLOCK AND TIMING
8N4SV75KC-0031CDI
8N4SV75KC-0031CDI
Renesas Electronics America Inc
IC OSC VCXO 80MHZ 6-CLCC
8N4SV75BC-0071CDI
8N4SV75BC-0071CDI
Renesas Electronics America Inc
IC OSC VCXO 622.08MHZ 6-CLCC
8N4SV76FC-0083CDI
8N4SV76FC-0083CDI
Renesas Electronics America Inc
IC OSC VCXO 160MHZ 6-CLCC
8N4Q001EG-0090CDI
8N4Q001EG-0090CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
ADC1613S080HN-C1
ADC1613S080HN-C1
Renesas Electronics America Inc
IC ADC 16BIT PIPELINED 32VFQFPN
UPD78F1515AGC-UEU-AX
UPD78F1515AGC-UEU-AX
Renesas Electronics America Inc
IC MCU 16BIT 128KB FLASH 100LQFP
R5F100ACASP#V0
R5F100ACASP#V0
Renesas Electronics America Inc
IC MCU 16BIT 32KB FLASH 30LSSOP
R5F100MHDFA#30
R5F100MHDFA#30
Renesas Electronics America Inc
IC MCU 16BIT 192KB FLASH 80LQFP
72V01L15JG
72V01L15JG
Renesas Electronics America Inc
IC ASYNCH 512X9 15NS 32-PLCC
IDT71V3577YS80PF8
IDT71V3577YS80PF8
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 100TQFP