RJK5012DPP-E0#T2
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Renesas Electronics America Inc RJK5012DPP-E0#T2

Manufacturer No:
RJK5012DPP-E0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK5012DPP-E0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 12A TO220FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number RJK5012DPP-E0#T2 RJK5012DPP-K0#T2   RJK5012DPP-00#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active Active
FET Type N-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 500 V - -
Current - Continuous Drain (Id) @ 25°C 12A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 620mOhm @ 6A, 10V - -
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V - -
Vgs (Max) ±30V - -
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 30W (Tc) - -
Operating Temperature 150°C (TJ) - -
Mounting Type Through Hole - -
Supplier Device Package TO-220FP - -
Package / Case TO-220-3 Full Pack - -

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