RJK5012DPP-00#T2
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Renesas Electronics America Inc RJK5012DPP-00#T2

Manufacturer No:
RJK5012DPP-00#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK5012DPP-00#T2 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

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368

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Similar Products

Part Number RJK5012DPP-00#T2 RJK5014DPP-00#T2   RJK6012DPP-00#T2   RJL5012DPP-00#T2   RJK5012DPP-K0#T2   RJK5012DPP-E0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active Obsolete
FET Type - - - - - N-Channel
Technology - - - - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - - - - 500 V
Current - Continuous Drain (Id) @ 25°C - - - - - 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - - - - 10V
Rds On (Max) @ Id, Vgs - - - - - 620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id - - - - - -
Gate Charge (Qg) (Max) @ Vgs - - - - - 29 nC @ 10 V
Vgs (Max) - - - - - ±30V
Input Capacitance (Ciss) (Max) @ Vds - - - - - 1100 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) - - - - - 30W (Tc)
Operating Temperature - - - - - 150°C (TJ)
Mounting Type - - - - - Through Hole
Supplier Device Package - - - - - TO-220FP
Package / Case - - - - - TO-220-3 Full Pack

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