RJK4006DPP-M0#T2
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Renesas Electronics America Inc RJK4006DPP-M0#T2

Manufacturer No:
RJK4006DPP-M0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK4006DPP-M0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 8A TO220FL
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):29W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FL
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number RJK4006DPP-M0#T2 RJK4007DPP-M0#T2   RJK4002DPP-M0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 7.6A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V 550mOhm @ 7A, 10V 2.9Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 24.5 nC @ 10 V 6 nC @ 100 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V 850 pF @ 25 V 165 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 29W (Tc) 32W (Tc) 20W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FL TO-220FL TO-220FL
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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