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RJK2511DPK-00#T0
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Renesas Electronics America Inc RJK2511DPK-00#T0

Manufacturer No:
RJK2511DPK-00#T0
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK2511DPK-00#T0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 65A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:65A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:34mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-220-3 Full Pack
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