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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
RJK2006DPE-00#J3
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Renesas Electronics America Inc RJK2006DPE-00#J3
Manufacturer No:
RJK2006DPE-00#J3
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK2006DPE-00#J3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 40A 4LDPAK
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
59mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LDPAK
Package / Case:
SC-83
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UnitPrice:
-
Quantity:
15
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