RJK1575DPA-00#J5A
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Renesas Electronics America Inc RJK1575DPA-00#J5A

Manufacturer No:
RJK1575DPA-00#J5A
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK1575DPA-00#J5A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 25A WPAK
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:48mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:WPAK(3F) (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number RJK1575DPA-00#J5A RJK1576DPA-00#J5A  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 12.5A, 10V 58mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V 1200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 65W (Tc) 65W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package WPAK(3F) (5x6) WPAK(3F) (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

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