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| Part Number | RJK1003DPN-E0#T2 | RJK1001DPN-E0#T2 | RJK1002DPN-E0#T2 | RJK1003DPN-A0#T2 |
|---|---|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Product Status | Obsolete | Obsolete | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) | 80A (Ta) | 70A (Ta) | 50A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V | 5.5mOhm @ 40A, 10V | 7.6mOhm @ 35A, 10V | 11mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | - | - | - | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | 147 nC @ 10 V | 94 nC @ 10 V | 59 nC @ 10 V |
| Vgs (Max) | ±20V | - | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V | 10 pF @ 10 V | 6450 pF @ 10 V | 4150 pF @ 10 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 125W (Tc) | 200W (Tc) | 150W (Tc) | 125W (Ta) |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220ABA |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
