RJK1003DPN-A0#T2
  • Share:

Renesas Electronics America Inc RJK1003DPN-A0#T2

Manufacturer No:
RJK1003DPN-A0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK1003DPN-A0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 50A TO220ABA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):125W (Ta)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220ABA
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.59
113

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJK1003DPN-A0#T2 RJK1003DPN-E0#T2   RJK1002DPN-A0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 50A (Ta) 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 25A, 10V 11mOhm @ 25A, 10V 7.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA - 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 10 V 4150 pF @ 10 V 6450 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 125W (Ta) 125W (Tc) 150W (Ta)
Operating Temperature 150°C 150°C (TJ) 150°C
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220ABA TO-220AB TO-220ABA
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

G3R60MT07K
G3R60MT07K
GeneSiC Semiconductor
750V 60M TO-247-4 G3R SIC MOSFET
FDT459N
FDT459N
Fairchild Semiconductor
6.5A, 30V, 0.035OHM, N-CHANNEL,
STFI260N6F6
STFI260N6F6
STMicroelectronics
MOSFET N-CH 60V 80A I2PAKFP
APT34F60S
APT34F60S
Microchip Technology
MOSFET N-CH 600V 36A D3PAK
NTF6P02T3G
NTF6P02T3G
onsemi
MOSFET P-CH 20V 10A SOT223
IAUC70N08S5N074ATMA1
IAUC70N08S5N074ATMA1
Infineon Technologies
MOSFET N-CH 80V 70A 8TDSON-33
BUK98180-100A,115
BUK98180-100A,115
NXP USA Inc.
MOSFET N-CH 100V 4.6A SOT-223
IRF737LC
IRF737LC
Vishay Siliconix
MOSFET N-CH 300V 6.1A TO220AB
IXFT17N80Q
IXFT17N80Q
IXYS
MOSFET N-CH 800V 17A TO268
SUM50N06-16L-E3
SUM50N06-16L-E3
Vishay Siliconix
MOSFET N-CH 60V 50A D2PAK
IRF1018ESLPBF
IRF1018ESLPBF
Infineon Technologies
MOSFET N-CH 60V 79A TO262
TK20P04M1,RQ(S
TK20P04M1,RQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 20A DPAK

Related Product By Brand

843022AGI-48LF
843022AGI-48LF
Renesas Electronics America Inc
IC CLK SYNTHESIZER LVPECL 8TSSOP
9FGV1004C214NBGI
9FGV1004C214NBGI
Renesas Electronics America Inc
IC CLOCK GENERATOR 24QFN
8N4Q001EG-0112CDI8
8N4Q001EG-0112CDI8
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
8N4Q001FG-1114CDI8
8N4Q001FG-1114CDI8
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
8N4QV01FG-0091CDI8
8N4QV01FG-0091CDI8
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
R5F100BGDNA#U0
R5F100BGDNA#U0
Renesas Electronics America Inc
IC MCU 16BIT 128KB FLASH 32HWQFN
72V285L15TF
72V285L15TF
Renesas Electronics America Inc
IC FIFO SS 65536X18 15NS 64STQFP
71T75802S133BG8
71T75802S133BG8
Renesas Electronics America Inc
IC SRAM 18MBIT PARALLEL 119PBGA
71321LA45J
71321LA45J
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 52PLCC
ICL7665SACPAZ
ICL7665SACPAZ
Renesas Electronics America Inc
IC SUPERVISOR 2 CHANNEL 8DIP
X4285S8-4.5A
X4285S8-4.5A
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 8SO
X5168PIZ-4.5A
X5168PIZ-4.5A
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 8DIP