RJK1003DPN-A0#T2
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Renesas Electronics America Inc RJK1003DPN-A0#T2

Manufacturer No:
RJK1003DPN-A0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK1003DPN-A0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 50A TO220ABA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):125W (Ta)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220ABA
Package / Case:TO-220-3
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$3.59
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Similar Products

Part Number RJK1003DPN-A0#T2 RJK1003DPN-E0#T2   RJK1002DPN-A0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 50A (Ta) 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 25A, 10V 11mOhm @ 25A, 10V 7.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA - 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 10 V 4150 pF @ 10 V 6450 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 125W (Ta) 125W (Tc) 150W (Ta)
Operating Temperature 150°C 150°C (TJ) 150°C
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220ABA TO-220AB TO-220ABA
Package / Case TO-220-3 TO-220-3 TO-220-3

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