RJK0856DPB-00#J5
  • Share:

Renesas Electronics America Inc RJK0856DPB-00#J5

Manufacturer No:
RJK0856DPB-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0856DPB-00#J5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 35A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.9mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.47
597

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJK0856DPB-00#J5 RJK0456DPB-00#J5   RJK0656DPB-00#J5   RJK0851DPB-00#J5   RJK0852DPB-00#J5   RJK0853DPB-00#J5   RJK0854DPB-00#J5   RJK0855DPB-00#J5  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 40 V 60 V 80 V 80 V 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 50A (Ta) 40A (Ta) 20A (Ta) 30A (Ta) 40A (Ta) 25A (Ta) 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 17.5A, 10V 3.2mOhm @ 25A, 10V 5.6mOhm @ 20A, 10V 23mOhm @ 10A, 10V 12mOhm @ 15A, 10V 8mOhm @ 20A, 10V 13mOhm @ 12.5A, 10V 11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - - - 2.5V @ 1mA - - - -
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 39 nC @ 10 V 40 nC @ 10 V 14 nC @ 4.5 V 28 nC @ 4.5 V 40 nC @ 4.5 V 27 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V 3000 pF @ 10 V 3000 pF @ 10 V 2050 pF @ 10 V 4150 pF @ 10 V 6170 pF @ 10 V 2000 pF @ 10 V 2550 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 65W (Tc) 65W (Tc) 65W (Tc) 45W (Tc) 55W (Tc) 65W (Tc) 55W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

SIHG15N80AE-GE3
SIHG15N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 13A TO247AC
DMN65D8LV-7
DMN65D8LV-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT563 T&R
NDS0610-G
NDS0610-G
onsemi
FET -60V 10.0 MOHM SOT23
SSM5H90ATU,LF
SSM5H90ATU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 2.4A UFV
SIHP17N60D-E3
SIHP17N60D-E3
Vishay Siliconix
MOSFET N-CH 600V 17A TO220AB
AUIRLS3034-7TRL
AUIRLS3034-7TRL
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK
IRL5602L
IRL5602L
Infineon Technologies
MOSFET P-CH 20V 24A TO262
2N7002ET3G
2N7002ET3G
onsemi
MOSFET N-CH 60V 260MA SOT23-3
IPI80N06S208AKSA1
IPI80N06S208AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
STI12N65M5
STI12N65M5
STMicroelectronics
MOSFET N-CH 650V 8.5A I2PAK
BUK961R7-40E,118
BUK961R7-40E,118
NXP USA Inc.
MOSFET N-CH 40V 120A D2PAK
RQ5E035ATTCL
RQ5E035ATTCL
Rohm Semiconductor
MOSFET P-CH 30V 3.5A TSMT3

Related Product By Brand

651SCMGI
651SCMGI
Renesas Electronics America Inc
COL 2.00X2.00X0.50 MM, 0.50MM PI
8N4SV75BC-0006CDI8
8N4SV75BC-0006CDI8
Renesas Electronics America Inc
IC OSC VCXO 622.08MHZ 6-CLCC
8N4SV76EC-0144CDI8
8N4SV76EC-0144CDI8
Renesas Electronics America Inc
IC OSC VCXO 100MHZ 6-CLCC
8N4QV01KG-0057CDI
8N4QV01KG-0057CDI
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
8N4QV01LG-0138CDI8
8N4QV01LG-0138CDI8
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
M62352GP#TF0J
M62352GP#TF0J
Renesas Electronics America Inc
DAC, 8-BIT, 12-CHANNELS
M30843MW-XXXFP
M30843MW-XXXFP
Renesas Electronics America Inc
IC MCU 16/32BIT 320KB 100QFP
M30280FAHP#33B
M30280FAHP#33B
Renesas Electronics America Inc
IC MCU
ISL8842AMBZ-T
ISL8842AMBZ-T
Renesas Electronics America Inc
IC OFFLINE SWITCH MULT TOP 8SOIC
X5045V14I-2.7A
X5045V14I-2.7A
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 14TSSOP
X5083PI-2.7
X5083PI-2.7
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 8DIP
ISL8203MIRZ-T
ISL8203MIRZ-T
Renesas Electronics America Inc
DC DC CONVERTER 0.8-5V 0.8-5V