RJK0852DPB-00#J5
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Renesas Electronics America Inc RJK0852DPB-00#J5

Manufacturer No:
RJK0852DPB-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0852DPB-00#J5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 30A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Part Number RJK0852DPB-00#J5 RJK0854DPB-00#J5   RJK0855DPB-00#J5   RJK0853DPB-00#J5   RJK0856DPB-00#J5   RJK0452DPB-00#J5   RJK0652DPB-00#J5   RJK0851DPB-00#J5  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 80 V 40 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 25A (Ta) 30A (Ta) 40A (Ta) 35A (Ta) 45A (Ta) 35A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 13mOhm @ 12.5A, 10V 11mOhm @ 15A, 10V 8mOhm @ 20A, 10V 8.9mOhm @ 17.5A, 10V 3.5mOhm @ 22.5A, 10V 7mOhm @ 17.5A, 10V 23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - - - - - - - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V 27 nC @ 10 V 35 nC @ 10 V 40 nC @ 4.5 V 40 nC @ 10 V 26 nC @ 4.5 V 29 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 10 V 2000 pF @ 10 V 2550 pF @ 10 V 6170 pF @ 10 V 3000 pF @ 10 V 4030 pF @ 10 V 4100 pF @ 10 V 2050 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 55W (Tc) 55W (Tc) 60W (Tc) 65W (Tc) 65W (Tc) 55W (Tc) 55W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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