RJK0851DPB-00#J5
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Renesas Electronics America Inc RJK0851DPB-00#J5

Manufacturer No:
RJK0851DPB-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0851DPB-00#J5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 20A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number RJK0851DPB-00#J5 RJK0852DPB-00#J5   RJK0854DPB-00#J5   RJK0855DPB-00#J5   RJK0853DPB-00#J5   RJK0856DPB-00#J5   RJK0451DPB-00#J5   RJK0651DPB-00#J5  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V 80 V 80 V 80 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 30A (Ta) 25A (Ta) 30A (Ta) 40A (Ta) 35A (Ta) 35A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 10A, 10V 12mOhm @ 15A, 10V 13mOhm @ 12.5A, 10V 11mOhm @ 15A, 10V 8mOhm @ 20A, 10V 8.9mOhm @ 17.5A, 10V 7mOhm @ 17.5A, 10V 14mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA - - - - - - -
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 28 nC @ 4.5 V 27 nC @ 10 V 35 nC @ 10 V 40 nC @ 4.5 V 40 nC @ 10 V 14 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 10 V 4150 pF @ 10 V 2000 pF @ 10 V 2550 pF @ 10 V 6170 pF @ 10 V 3000 pF @ 10 V 2010 pF @ 10 V 2030 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 45W (Tc) 55W (Tc) 55W (Tc) 60W (Tc) 65W (Tc) 65W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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