RJK0703DPN-E0#T2
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Renesas Electronics America Inc RJK0703DPN-E0#T2

Manufacturer No:
RJK0703DPN-E0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK0703DPN-E0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 70A TO220AB
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:70A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number RJK0703DPN-E0#T2 RJK0703DPP-E0#T2   RJK0603DPN-E0#T2   RJK0701DPN-E0#T2   RJK0702DPN-E0#T2   RJK0703DPN-A0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 60 V 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 70A (Ta) 70A (Ta) 80A (Ta) 100A (Ta) 90A (Ta) 70A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V - - 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 35A, 10V 6.7mOhm @ 35A, 10V 5.2mOhm @ 40A, 10V 3.8mOhm @ 50A, 10V 4.8mOhm @ 45A, 10V 6.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id - - - - - 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V 57 nC @ 10 V 140 nC @ 10 V 89 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V - - ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 10 V 4150 pF @ 10 V 4150 pF @ 10 V 10 pF @ 10 V 10 pF @ 10 V 4150 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 125W (Tc) 25W (Tc) 125W (Tc) 200W (Tc) 150W (Tc) 125W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220FP TO-220AB TO-220AB TO-220AB TO-220ABA
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3 TO-220-3

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