RJK0654DPB-00#J5
  • Share:

Renesas Electronics America Inc RJK0654DPB-00#J5

Manufacturer No:
RJK0654DPB-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0654DPB-00#J5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 30A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.55
74

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJK0654DPB-00#J5 RJK0854DPB-00#J5   RJK0655DPB-00#J5   RJK0656DPB-00#J5   RJK0454DPB-00#J5   RJK0651DPB-00#J5   RJK0652DPB-00#J5   RJK0653DPB-00#J5  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V 60 V 60 V 40 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 25A (Ta) 35A (Ta) 40A (Ta) 40A (Ta) 25A (Ta) 35A (Ta) 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 15A, 10V 13mOhm @ 12.5A, 10V 6.7mOhm @ 17.5A, 10V 5.6mOhm @ 20A, 10V 4.9mOhm @ 20A, 10V 14mOhm @ 12.5A, 10V 7mOhm @ 17.5A, 10V 4.8mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id - - - - - - - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 27 nC @ 10 V 35 nC @ 10 V 40 nC @ 10 V 25 nC @ 10 V 15 nC @ 4.5 V 29 nC @ 4.5 V 42 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 10 V 2000 pF @ 10 V 2550 pF @ 10 V 3000 pF @ 10 V 2000 pF @ 10 V 2030 pF @ 10 V 4100 pF @ 10 V 6100 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 55W (Tc) 55W (Tc) 60W (Tc) 65W (Tc) 55W (Tc) 45W (Tc) 55W (Tc) 65W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

PSMN050-80BS,118
PSMN050-80BS,118
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 2
2SK2378
2SK2378
onsemi
N-CHANNEL POWER MOSFET
STB6NK60ZT4
STB6NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 6A D2PAK
PJA3415AE_R1_00001
PJA3415AE_R1_00001
Panjit International Inc.
SOT-23, MOSFET
DMT10H010LSS-13
DMT10H010LSS-13
Diodes Incorporated
MOSFET N-CH 100V 11.5A/29.5A 8SO
BSZ065N06LS5ATMA1
BSZ065N06LS5ATMA1
Infineon Technologies
MOSFET N-CH 60V 40A TSDSON
CSD18512Q5BT
CSD18512Q5BT
Texas Instruments
MOSFET N-CH 40V 211A 8VSON
IRFIBF20G
IRFIBF20G
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220-3
IRFBC40AL
IRFBC40AL
Vishay Siliconix
MOSFET N-CH 600V 6.2A I2PAK
IXFN32N60
IXFN32N60
IXYS
MOSFET N-CH 600V 32A SOT227B
STS15N4LLF5
STS15N4LLF5
STMicroelectronics
MOSFET N-CH 40V 15A 8SO
TPCC8067-H,LQ(S
TPCC8067-H,LQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 9A 8TSON

Related Product By Brand

XLP735150.000000X
XLP735150.000000X
Renesas Electronics America Inc
XTAL OSC XO 150.0000MHZ LVPECL
HZ12C3L-E
HZ12C3L-E
Renesas Electronics America Inc
DIODE ZENER 12V 400MW DO35
9FGV1004B222NBGI8
9FGV1004B222NBGI8
Renesas Electronics America Inc
IC CLOCK GENERATOR 24QFN
8N3QV01LG-0010CDI
8N3QV01LG-0010CDI
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
8N4QV01KG-2163CDI8
8N4QV01KG-2163CDI8
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
R5F11NLGAFB#30
R5F11NLGAFB#30
Renesas Electronics America Inc
IC MCU 16BIT 128KB FLASH 64LFQFP
R5F10EGCGNA#20
R5F10EGCGNA#20
Renesas Electronics America Inc
IC MCU 16BIT 32KB FLASH 48HWQFN
ISL28148FHZ-T7A
ISL28148FHZ-T7A
Renesas Electronics America Inc
IC OPAMP GP 1 CIRCUIT 6SOT
TW8835-BA2-CRT
TW8835-BA2-CRT
Renesas Electronics America Inc
IC VIDEO PROCESSOR 144TFBGA
71V321L55J
71V321L55J
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 52PLCC
ISL6745AU
ISL6745AU
Renesas Electronics America Inc
IC REG CTRLR MULT TOP 10MSOP
F1200NBGI8
F1200NBGI8
Renesas Electronics America Inc
IC AMP GP 50MHZ-160MHZ 28VFQFPN