RJK0602DPN-E0#T2
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Renesas Electronics America Inc RJK0602DPN-E0#T2

Manufacturer No:
RJK0602DPN-E0#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
RJK0602DPN-E0#T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 110A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:110A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6450 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number RJK0602DPN-E0#T2 RJK0702DPN-E0#T2   RJK0603DPN-E0#T2  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 75 V 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Ta) 90A (Ta) 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V 4.8mOhm @ 45A, 10V 5.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 89 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V 10 pF @ 10 V 4150 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 125W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

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