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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
RJK03E3DNS-00#J5
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Renesas Electronics America Inc RJK03E3DNS-00#J5
Manufacturer No:
RJK03E3DNS-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK03E3DNS-00#J5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 14A 8HWSON
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
11.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
5.7 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
10W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
8-HWSON (3.3x3.3)
Package / Case:
8-PowerWDFN
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UnitPrice:
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Quantity:
324
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