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RJK03E3DNS-00#J5
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Renesas Electronics America Inc RJK03E3DNS-00#J5

Manufacturer No:
RJK03E3DNS-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK03E3DNS-00#J5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 14A 8HWSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:11.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:5.7 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1050 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):10W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HWSON (3.3x3.3)
Package / Case:8-PowerWDFN
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