RJK03B8DPA-00#J53
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Renesas Electronics America Inc RJK03B8DPA-00#J53

Manufacturer No:
RJK03B8DPA-00#J53
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK03B8DPA-00#J53 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A 8WPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1330 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-WPAK
Package / Case:8-PowerWDFN
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Similar Products

Part Number RJK03B8DPA-00#J53 RJK03B9DPA-00#J53   RJK03B7DPA-00#J53  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 30A (Ta) 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 9.3mOhm @ 15A, 10V 10.6mOhm @ 15A, 10V 7.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 7.4 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 10 V 1110 pF @ 10 V 1670 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 28W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature - 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WPAK 8-WPAK 8-WPAK
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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