RJK0391DPA-00#J5A
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Renesas Electronics America Inc RJK0391DPA-00#J5A

Manufacturer No:
RJK0391DPA-00#J5A
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0391DPA-00#J5A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A 8WPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WPAK (3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number RJK0391DPA-00#J5A RJK0395DPA-00#J5A   RJK0394DPA-00#J5A   RJK03M1DPA-00#J5A   RJK0393DPA-00#J5A   RJK0381DPA-00#J5A   RJK0390DPA-00#J5A  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete Obsolete Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 30A (Ta) 35A (Ta) 50A (Ta) 40A (Ta) 40A (Ta) 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - - 4.5V, 10V 4.5V, 10V - -
Rds On (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V 7.7mOhm @ 15A, 10V 5.3mOhm @ 17.5A, 10V 2.3mOhm @ 25A, 10V 4.3mOhm @ 20A, 10V 4.5mOhm @ 20A, 10V 2.2mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA - - - - - -
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V 11 nC @ 4.5 V 15.5 nC @ 4.5 V 25 nC @ 4.5 V 21 nC @ 4.5 V 15 nC @ 4.5 V 54 nC @ 4.5 V
Vgs (Max) ±20V - - ±20V ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 10 V 1670 pF @ 10 V 2430 pF @ 10 V 4720 pF @ 10 V 3270 pF @ 10 V 2200 pF @ 10 V 8900 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 50W (Tc) 30W (Tc) 35W (Tc) 45W (Tc) 40W (Tc) 45W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WPAK (3) 8-WPAK 8-WPAK WPAK(3F) (5x6) 8-WPAK 8-WPAK 8-WPAK
Package / Case 8-PowerWDFN 8-WFDFN Exposed Pad 8-PowerWDFN 8-PowerVDFN 8-PowerWDFN 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad

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