RJK0355DPA-01#J0B
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Renesas Electronics America Inc RJK0355DPA-01#J0B

Manufacturer No:
RJK0355DPA-01#J0B
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK0355DPA-01#J0B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A 8WPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:10.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WPAK
Package / Case:8-PowerWDFN
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Similar Products

Part Number RJK0355DPA-01#J0B RJK0353DPA-01#J0B  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 15A, 10V 5.2mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 10 V 2180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WPAK 8-WPAK
Package / Case 8-PowerWDFN 8-PowerWDFN

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