RJK0332DPB-00#J0
  • Share:

Renesas Electronics America Inc RJK0332DPB-00#J0

Manufacturer No:
RJK0332DPB-00#J0
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK0332DPB-00#J0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 35A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

-
435

Please send RFQ , we will respond immediately.

Similar Products

Part Number RJK0332DPB-00#J0 RJK0332DPB-01#J0  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 17.5A, 10V 4.7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 10 V 2180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 45W (Tc)
Operating Temperature - 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

FDP2552
FDP2552
onsemi
MOSFET N-CH 150V 5A/37A TO220-3
STFH24N60M2
STFH24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220FP
IPP260N06N3G
IPP260N06N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
HUFA76443P3_NL
HUFA76443P3_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SIDR510EP-T1-RE3
SIDR510EP-T1-RE3
Vishay Siliconix
N-CHANNEL 100 V (D-S) 175C MOSFE
IXTP24N65X2
IXTP24N65X2
IXYS
MOSFET N-CH 650V 24A TO220AB
TK10J80E,S1E
TK10J80E,S1E
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 10A TO3P
IPD12CN10NG
IPD12CN10NG
Infineon Technologies
OPTLMOS N-CHANNEL POWER MOSFET
HUFA75823D3ST
HUFA75823D3ST
onsemi
MOSFET N-CH 150V 14A TO252AA
IXTQ200N075T
IXTQ200N075T
IXYS
MOSFET N-CH 75V 200A TO3P
FDC636P
FDC636P
onsemi
MOSFET P-CH 20V 2.8A SUPERSOT6
SUD50N03-09P-E3
SUD50N03-09P-E3
Vishay Siliconix
MOSFET N-CH 30V 63A TO252

Related Product By Brand

XLH735066.670000I
XLH735066.670000I
Renesas Electronics America Inc
XTAL OSC XO 66.6700MHZ HCMOS SMD
8N3DV85BC-0173CDI
8N3DV85BC-0173CDI
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N3SV76EC-0144CDI
8N3SV76EC-0144CDI
Renesas Electronics America Inc
IC OSC VCXO 100MHZ 6-CLCC
8N3SV76KC-0028CDI
8N3SV76KC-0028CDI
Renesas Electronics America Inc
IC OSC VCXO 156.25MHZ 6-CLCC
8N4DV85AC-0048CDI8
8N4DV85AC-0048CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4SV75AC-0030CDI8
8N4SV75AC-0030CDI8
Renesas Electronics America Inc
IC OSC VCXO 312.5MHZ 6-CLCC
8N4SV76EC-0171CDI
8N4SV76EC-0171CDI
Renesas Electronics America Inc
IC OSC VCXO 622.08MHZ 6CLCC
8N4Q001LG-1149CDI8
8N4Q001LG-1149CDI8
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
R5F211A3SP#U0
R5F211A3SP#U0
Renesas Electronics America Inc
IC MCU 16BIT 12KB FLASH 20LSSOP
72V265LA20PF8
72V265LA20PF8
Renesas Electronics America Inc
IC FIFO SS 16384X18 20NS 64-TQFP
IDT71V67703S85PF
IDT71V67703S85PF
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 100TQFP
ISL6218CVZ-T
ISL6218CVZ-T
Renesas Electronics America Inc
IC CTRLR INTEL PENT M 38-TSSOP