RJK0330DPB-01#J0
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Renesas Electronics America Inc RJK0330DPB-01#J0

Manufacturer No:
RJK0330DPB-01#J0
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0330DPB-01#J0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 45A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:45A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number RJK0330DPB-01#J0 RJK0332DPB-01#J0   RJK0331DPB-01#J0  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 45A (Ta) 35A (Ta) 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 2.7mOhm @ 22.5A, 10V 4.7mOhm @ 17.5A, 10V 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V 14 nC @ 4.5 V 22 nC @ 4.5 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V 2180 pF @ 10 V 3380 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 55W (Tc) 45W (Tc) 50W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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