RJK0305DPB-WS#J0
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Renesas Electronics America Inc RJK0305DPB-WS#J0

Manufacturer No:
RJK0305DPB-WS#J0
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
RJK0305DPB-WS#J0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 30A 5LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number RJK0305DPB-WS#J0 RJK0301DPB-WS#J0  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V 2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V 32 nC @ 10 V
Vgs (Max) +16V, -12V +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 10 V 5000 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 65W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669

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