RJK0301DPB-00#J0
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Renesas Electronics America Inc RJK0301DPB-00#J0

Manufacturer No:
RJK0301DPB-00#J0
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK0301DPB-00#J0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 60A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:5000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):65W (Tc)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number RJK0301DPB-00#J0 RJK0301DPB-02#J0  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta) 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V 2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V 32 nC @ 4.5 V
Vgs (Max) - +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 10 V 5000 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 65W (Tc) 65W (Tc)
Operating Temperature - 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669

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