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RJK0230DPA-00#J5A
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Renesas Electronics America Inc RJK0230DPA-00#J5A

Manufacturer No:
RJK0230DPA-00#J5A
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK0230DPA-00#J5A Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:20A, 50A
Rds On (Max) @ Id, Vgs:7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1650pF @ 10V
Power - Max:15W, 35W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:8-WPAK-D
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In Stock

$1.70
237

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