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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Arrays
RJK0222DNS-00#J5
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Renesas Electronics America Inc RJK0222DNS-00#J5
Manufacturer No:
RJK0222DNS-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK0222DNS-00#J5 Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Delivery:
Payment:
Product Attributes
FET Type:
2 N-Channel (Half Bridge)
FET Feature:
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
14A, 16A
Rds On (Max) @ Id, Vgs:
9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
810pF @ 10V
Power - Max:
8W, 10W
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-WDFN Exposed Pad
Supplier Device Package:
8-DFN (5x6)
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UnitPrice:
$1.03
Quantity:
9
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