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RJK0222DNS-00#J5
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Renesas Electronics America Inc RJK0222DNS-00#J5

Manufacturer No:
RJK0222DNS-00#J5
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
RJK0222DNS-00#J5 Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:14A, 16A
Rds On (Max) @ Id, Vgs:9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:810pF @ 10V
Power - Max:8W, 10W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-WDFN Exposed Pad
Supplier Device Package:8-DFN (5x6)
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$1.03
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